Rapid Thermal And Integrated Processing

Rapid thermal and integrated processing is an emerging single-wafer technology in ULSI semiconductor manufacturing, electrical engineering, applied physics and materials science. Here, the physics and engineering of this technology are discussed at the graduate level. Three interrelated areas are covered. First, the thermophysics of photon-induced annealing of semiconductor and related materials, including fundamental pyrometry and emissivity issues, the modelling of reactor designs and processes, and their relation to temperature uniformity. Second, process integration, treating the advances in basic equipment design, scale-up, integrated cluster-tool equipment, including wafer cleaning and integrated processing. Third, the deposition and processing of thin epitaxial, dielectric and metal films, covering selective deposition and epitaxy, integrated processing of layer stacks, and new areas of potential application, such as the processing of III-V semiconductor structures and thin- film head processing for high-density magnetic data storage.

This book is the latest in a continuing series on rapid thermal processing and related topics. It embraces a diversity of research, development and manufacturing activities that require rapid thermal and integrated processing techniques which are recognized by their acronyms, such as rapid thermal annealing (RTA), rapid thermal processing (RTP), rapid thermal chemical vapor deposition (RTCVP), rapid thermal oxidation (RTO), and others. This fifth anniversary volume reports notable advances in the use of rapid thermal techniques in processing science and technology, and for process control in industrial fabrication facilities. It is organized around progress obtained through: evaluation methodology; equipment and process modelling; temperature control; defects and diffusion associated with annealing; metallizations such as silicidation; novel processing of sol-gel and magnetic films; dielectric growth and deposition; and silicon or silicon-germanium film deposition.

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

The fourth in a continuing series on rapid thermal processing (RTP), this volume addresses work in traditional RTP processes such as dielectric growth, annealing and silicides, as well as developments in integrated processes. The primary focus, however, is the manufacturing aspects of RTP and the successful integration of RTP into production semiconductor fabs. Emphasis is placed on process and equipment modelling and the critical aspects of RTP, such as temperature measurement, uniformity and control. Topics include: modelling, sensors and control; integrated processing and manufacturing; dielectrics; epitaxy, polysilicon and devices; and junctions, metallization and contacts.

The MRS proceedings series on rapid thermal processing (RTP) has become the predominant international forum for research in this exciting and fast-growing field. In particular, this book in the series clearly indicates that the science of RTP is increasingly better understood and that equipment simulation and engineering have matured. With the so-called 'second generation' equipment vendors are providing useful and production-worthy solutions to the most pertinent problems within RTP - temperature measurement and reproducability. For that reason, the issues of temperature calibration and metrology, along with the International Temperature Scale, are featured. The evaluation and modelling of furnace, mini-bath and single-wafer RTP furnaces as the thermal method of choice are also addressed. Interesting developments are reported in the processing of dielectrics. Applications outside the field of silicon semiconductors are also presented. Topics include: measurement; RTCVD; modelling and manufacturing; integrated processing; silicides; annealing and defects; dielectrics; and RTP of III-V materials and other novel applications.

The MRS proceedings series on rapid thermal processing (RTP) has become the predominant international forum for research in this exciting and fast-growing field. In particular, thisvolume in the series presents work in traditional RTP processes such as dielectric growth, annealing and silicides, as well as developments in novel modelling and integrated processes. Papers on equipment issues illustrate that problems such as temperature uniformity and measurement, traditionally viewed as limitations for RTP technology, are well on the way to being resolved. Manufacturing aspects of RTP and the successful integration of RTP into production semiconductor fabs are also addressed. Topics include: RTP equipment - modelling and new concepts; temperature measurement and control in RTP equipment; MOSFET gate stack engineering; MOSFET channel and source/drain engineering; silicides; and new applications of rapid thermal processing.