The Effects Of Ion Implantation On Optical Spectra Of Sio2 Glass

This book focuses on the fundamentals, technologies and properties of ion irradiation of dielectric materials (e.g. glasses, crystals) with regard to various photonic applications. It introduces readers to diverse ion-beam techniques for the fabrication and modification of micron- or nanoscale photonic structures, including optical waveguides, photonic crystals, and nanoparticle (nano-spheres and nano-rods) systems, and presents state-of-the-art advances in this multi-disciplinary research field, demonstrating the unique capabilities of ion-beam technologies in optical dielectric materials processing. The book discusses in detail the properties of ion-beam processed waveguides, as well as the modification of dielectrics for photonic applications, such as electro-optic modulation, nonlinear frequency conversion, waveguide amplification and lasing. It also explores synthesis and the correlated optical effects of nanoparticles by ion beams, and features examples of successful micro- and nano-photonic devices. Given its breadth of coverage, the book will particularly appeal to readers interested in ion-beam technology, materials science, and integrated optics.

The contents of this volume represent most of the papers presented either orally or as posters at the international conference held in Les rd th Arcs, Savoie, from June 29 to July 3 1987. The declared objective of the conference was to bring together specialists working in various fields, both academic and applied, to examine the state of our under standing of the physics of amorphous sioz from the point of view of its structure, defects (both intrinsic and extrinsic), its ability to trans port current and to trap charges, its sensitivity to irradiation, etc. For this reason, the proceedings is divided, as was the conference schedule, into a number of sections starting from a rather academic viewpoint of the internal structure of idealized Si0 and progressing 2 towards subjects of increasing technological importance such as charge transport and trapping and breakdown in thin films. The proceedings terminates with a section on novel applications of amorphous SiOz and in particular, buried oxide layers formed by ion implantation. Although every effort was made at the conference to ensure that each presentation occured in its most obvious session, in editing the proceedings we have taken the liberty of changing the order where it seems that a paper was in fact more appropriate to an alternative section. In any event, because of the natural overlap of subjects, many papers could have been suitably placed in several different sections.

The Physics of SiO2 and Its Interfaces covers the proceedings of the International Topical Conference on the Physics of SiO2 and its Interfaces, held at the IBM Thomas J. Watson Research Center, Yorktown Heights, New York on March 22-24, 1978. The book focuses on the properties, reactions, transformations, and structures of silicon dioxide (SiO2). The selection first discusses the electronic properties of vitreous SiO2 and small polaron formation and motion of holes in a-SiO2. Discussions focus on mobility edges and polarons, deep states in the gap, and excitons. The text also ponders on field-dependent hole and exciton transport in SiO2 and electron emission from SiO2 into vacuum. The publication takes a look at the electronic structures of crystalline and amorphous SiO2; band structures and electronic properties of SiO2; and optical absorption spectrum of SiO2. The text also tackles chemical bond and related properties of SiO2; topological effects on the band structure of silica; and properties of localized SiO2 clusters in layers of disordered silicon on silver. The selection is a good reference for physicists and readers interested in the physics of silicon dioxide.

Crystallization of annealed Li2O.2SiO2 glasses implanted with inert ions and fused SiO2 glass implanted with Li ions was monitored using infrared reflection spectroscopy. Elastic recoil detection analysis was used to study changes in the Li and H concentration induced in these glasses by implantation and annealing. Implantation of Li2O.2SiO2 with inert ions results in Li depletion, accompanied by H indiffusion, in the implanted region. For Li-implanted SiO2, crystallization of .cap alpha.-quartz is accompanied by appreciable Li diffusion to the surface and attendant H migration to the Li-depleted region. The crystallization mechanisms are discussed in terms of phase separation in the lithia-silica system.