Interconnect Centric Circuit Modeling And Simulation For Giga Hertz Vlsi Signal Power Integrity Applications

Modeling and Simulation of High Speed VLSI Interconnects brings together in one place important contributions and state-of-the-art research results in this rapidly advancing area. Modeling and Simulation of High Speed VLSI Interconnects serves as an excellent reference, providing insight into some of the most important issues in the field.

This book presents an updated selection of the most representative contributions to the 2nd and 3rd IEEE Workshops on Signal Propagation on Interconnects (SPI) which were held in Travemtinde (Baltic See Side), Germany, May 13-15, 1998, and in Titisee-Neustadt (Black Forest), Germany, May 19-21, 1999. This publication addresses the need of developers and researchers in the field of VLSI chip and package design. It offers a survey of current problems regarding the influence of interconnect effects on the electrical performance of electronic circuits and suggests innovative solutions. In this sense the present book represents a continua tion and a supplement to the first book "Signal Propagation on Interconnects", Kluwer Academic Publishers, 1998. The papers in this book cover a wide area of research directions: Beneath the des cription of general trends they deal with the solution of signal integrity problems, the modeling of interconnects, parameter extraction using calculations and measurements and last but not least actual problems in the field of optical interconnects.

This book addresses two main problems with interconnections at the chip and package level: crosstalk and simultaneous switching noise. Its orientation is towards giving general information rather than a compilation of practical cases. Each chapter contains a list of references for the topics.

To ensure maximum circuit reliability it is very important to estimate the circuit performance and signal integrity in the circuit design phase. A full phase simulation for performance estimation of a large-scale circuit not only require a massive computational resource but also need a lot of time to produce acceptable results. The estimation of performance/signal integrity of sub-nanometer circuits mostly depends on the interconnect capacitance. So, an accurate model for interconnect capacitance can be used in the circuit CAD (computer-aided design) tools for circuit performance estimation before circuit fabrication which reduces the computational resource requirement as well as the time constraints. We propose a new capacitance models for interconnect lines in multilevel interconnect structures by geometrically modeling the electrical flux lines of the interconnect lines. Closed-form equations have been derived analytically for ground and coupling capacitance. First, the capacitance model for a single line is developed, and then the new model is used to derive expressions for the capacitance of a line surrounded by neighboring lines in the same and the adjacent layers above and below. These expressions are simple, and the calculated results are within 10% of Ansys Q3D extracted values. Through silicon via (TSV) is one of the key components of the emerging 3D ICs. However, increasing number of TSVs in smaller silicon area leads to some severe negative impacts on the performance of the 3D IC. Growing signal integrity issues in TSVs is one of the major challenges of 3D integration. In this paper, different materials for the cores of the vias and the interposers are investigated to find the best possible combination that can reduce crosstalk and other losses like return loss and insertion loss in the TSVs. We have explored glass and silicon as interposer materials. The simulation results indicate that glass is the best option as interposer material although silicon interposer has some distinct advantages. For via cores three materials - copper (Cu), tungsten (W) and Cu-W bimetal are considered. From the analysis it can concluded that W would be better for high frequency applications due to lower transmission coefficient. Cu offers higher conductivity, but it has larger thermal expansion coefficient mismatch with silicon. The performance of Cu-W bimetal via would be in between Cu and W. However, W has a thermal expansion coefficient close to silicon. Therefore, bimetal Cu-W based TSV with W as the outer layer would be a suitable option for high frequency 3D IC. Here, we performed the analysis in terms of return loss, transmission coefficient and crosstalk in the vias. Signal speed in current digital systems depends mainly on the delay of interconnects. To overcome this delay problem and keep up with Moore’s law, 3D integrated circuit (vertical integration of multiple dies) with through-silicon via (TSV) has been introduced to ensure much smaller interconnect lengths, and lower delay and power consumption compared to conventional 2D IC technology. Like 2D circuit, the estimation of 3D circuit performance depends on different electrical parameters (capacitance, resistance, inductance) of the TSV. So, accurate modeling of the electrical parameters of the TSV is essential for the design and analysis of 3D ICs. We propose a set of new models to estimate the capacitance, resistance, and inductance of a Cu-filled TSV. The proposed analytical models are derived from the physical shape and the size of the TSV. The modeling approach is comprehensive and includes both the cylindrical and tapered TSVs as well as the bumps. On-chip integration of inductors has always been very challenging. However, for sub- 14nm on-chip applications, large area overhead imposed by the on-chip capacitors and inductors has become a more severe concern. To overcome this issue and ensure power integrity, a novel 3D Through-Silicon-Via (TSV) based inductor design is presented. The proposed TSV based inductor has the potential to achieve both high density and high performance. A new design of a Voltage Controlled Oscillator (VCO) utilizing the TSV based inductor is also presented. The implementation of the VCO is intended to study the feasibility, performance, and real-world application of the proposed TSV based inductor.

Building on the success of the previous three editions, Foundations for Microstrip Circuit Design offers extensive new, updated and revised material based upon the latest research. Strongly design-oriented, this fourth edition provides the reader with a fundamental understanding of this fast expanding field making it a definitive source for professional engineers and researchers and an indispensable reference for senior students in electronic engineering. Topics new to this edition: microwave substrates, multilayer transmission line structures, modern EM tools and techniques, microstrip and planar transmision line design, transmission line theory, substrates for planar transmission lines, Vias, wirebonds, 3D integrated interposer structures, computer-aided design, microstrip and power-dependent effects, circuit models, microwave network analysis, microstrip passive elements, and slotline design fundamentals.

This practical, tool-independent guide to designing digital circuits takes a unique, top-down approach, reflecting the nature of the design process in industry. Starting with architecture design, the book comprehensively explains the why and how of digital circuit design, using the physics designers need to know, and no more.

This leading-edge circuit design resource offers the knowledge needed to quickly pinpoint transmission problems that can compromise circuit design. Discusses both design and debug issues at gigabit per second data rates.

A cutting-edge guide to the theory and practice of high-speed digital system design An understanding of high-speed interconnect phenomena is essential for digital designers who must deal with the challenges posed by the ever-increasing operating speeds of today's microprocessors. This book provides a much-needed, practical guide to the state of the art of modern digital system design, combining easily accessible explanations with immensely useful problem-solving strategies. Written by three leading Intel engineers, High-Speed Digital System Design clarifies difficult and often neglected topics involving the effects of high frequencies on digital buses and presents a variety of proven techniques and application examples. Extensive appendices, formulas, modeling techniques as well as hundreds of figures are also provided. Coverage includes: * A thorough introduction to the digital aspects of basic transmission line theory * Crosstalk and nonideal transmission line effects on signal quality and timings * The impact of packages, vias, and connectors on signal integrity * The effects of nonideal return current paths, high frequency power delivery, and simultaneous switching noise * Explanations of how driving circuit characteristics affect the quality of the digital signal * Digital timing analysis at the system level that incorporates high-speed signaling effects into timing budgets * Methodologies for designing high-speed buses and handling the very large number of variables that affect interconnect performance * Radiated emission problems and how to minimize system noise * The practical aspects of making measurements in high-speed digital systems