Synthesis And Characterization Of Diamond Thin Films By Microwave Plasma Enhanced Chemical Vapor Deposition Mpecvd

Diamond thin films are deposited on silicon wafers by MPECVD process with the presence of methane, argon, and hydrogen gases. The reaction chamber is designed with an internal microwave reaction cavity and a high-pressure pocket for improving deposition conditions. Scanning electron microscopy reveals tetrahedral and cauliflower-shaped crystals for polycrystalline diamond and nanocrystalline diamond films, respectively. Spectroscopy ellipsometer studies indicate that diamond-like carbon (DLC) films are deposited with a thickness of 700 nm. Fourier transform infrared spectroscopy shows C-H stretching in the range from 2800 cm -1 to 3000 cm -1 . Nanoindentation is performed on DLC films with an average hardness of 10.98 GPa and an average elastic modulus of 90.32 GPa. The effects of chamber pressure, microwave forward power, and gas mixture on the plasma chemistry are discussed. Substrate temperature has a significant influence on film growth rate, and substrate pretreatment can enhance the quality of diamond films.

Discusses the most advanced techniques for diamond growth Assists diamond researchers in deciding on the most suitable process conditions Inspires readers to devise new CVD (chemical vapor deposition Ever since the early 1980s, and the discovery of the vapour growth methods of diamond film, heteroexpitaxial growth has become one of the most important and heavily discussed topics amongst the diamond research community. Kobashi has documented such discussions with a strong focus on how diamond films can be best utilised as an industrial material, working from the premise that crystal diamond films can be made by chemical vapour disposition. Kobashi provides information on the process and characterization technologies of oriented and heteroepitaxial growth of diamond films.

The Diamond Films Handbook is an important source of information for readers involved in the new diamond film technology, emphasizing synthesis technologies and diamond film applications. Containing over 1600 references, drawings, photographs, micrographs, equations, and tables, and contributions by experts from both industry and academia, it inclu

This work, written by leading international authorities, deals with nucleation growth and processing, characterization and electrical, thermal, optical and mechanical properties of thin film diamond. The final chapters are devoted to the broad range of applications of this material.

ABSTRACT: Diamond is widely known for its extraordinary properties, such as high thermal conductivity, energy bandgap and high material hardness and durability making it a very attractive material for microelectronic and mechanical applications. Synthetic diamonds produced by chemical vapor deposition (CVD) methods retain most of the properties of natural diamond. Within this class of material, nanocrystalline diamond (NCD) is being developed for microelectronic and microelectromechanical systems (MEMS) applications. During this research, intrinsic and doped NCD films were grown by the microwave plasma enhanced chemical vapor deposition (MPECVD) method using CH4/Ar/H2 gas mixture and CH4/Ar/N2 gas chemistries respectively. The first part of research focused on the growth and characterization of NCD films while the second part on the application of NCD as a structural material in MEMS device fabrication.