Study Of Noise In Semiconductor Devices Edited By A Van Der Ziel

Gives basic and up-to-date information about noise sources in electronic devices. Demonstrates how this information can be used to calculate the noise performance, in particular the noise figure, of electronic circuits using these devices. Optimization procedures, both for the circuits and for the devices, are then devised based on these data. Gives an elementary treatment of thermal noise, diffusion noise, and velocity-fluctuation noise, including quantum effects in thermal noise and maser noise.

This book demonstrates the role and abilities of fluctuation in semiconductor physics, and shows what kinds of physical information are involved in the noise characteristics of semiconductor materials and devices, how this information may be decoded and which advantages are inherent to the noise methods. The text provides a comprehensive account of current results, addressing problems which have not previously been covered in Western literature, including the excess noise of tunnel-recombination currents and photocurrents in diodes, fluctuation phenomena in a real photoconductor with different recombination centers, and methods of noise spectroscopy of levels in a wide range of materials and devices.

This book is a comprehensive guide to the study of noise in semiconductor devices. Mohan Lal Gupta provides an in-depth analysis of the causes and effects of noise in these devices, as well as methods for minimizing its impact. This book is an essential resource for researchers and engineers who want to understand and control the effects of noise in semiconductor devices. This work has been selected by scholars as being culturally important, and is part of the knowledge base of civilization as we know it. This work is in the "public domain in the United States of America, and possibly other nations. Within the United States, you may freely copy and distribute this work, as no entity (individual or corporate) has a copyright on the body of the work. Scholars believe, and we concur, that this work is important enough to be preserved, reproduced, and made generally available to the public. We appreciate your support of the preservation process, and thank you for being an important part of keeping this knowledge alive and relevant.

Space applications, nuclear physics, military operations, medical imaging, and especially electronics (modern silicon processing) are obvious fields in which radiation damage can have serious consequences, i.e., degradation of MOS devices and circuits. Zeroing in on vital aspects of this broad and complex topic, Radiation Effects in Semiconductors addresses the ever-growing need for a clear understanding of radiation effects on semiconductor devices and circuits to combat potential damage it can cause. Features a chapter authored by renowned radiation authority Lawrence T. Clark on Radiation Hardened by Design SRAM Strategies for TID and SEE Mitigation This book analyzes the radiation problem, focusing on the most important aspects required for comprehending the degrading effects observed in semiconductor devices, circuits, and systems when they are irradiated. It explores how radiation interacts with solid materials, providing a detailed analysis of three ways this occurs: Photoelectric effect, Compton effect, and creation of electron-positron pairs. The author explains that the probability of these three effects occurring depends on the energy of the incident photon and the atomic number of the target. The book also discusses the effects that photons can have on matter—in terms of ionization effects and nuclear displacement Written for post-graduate researchers, semiconductor engineers, and nuclear and space engineers with some electronics background, this carefully constructed reference explains how ionizing radiation is creating damage in semiconducting devices and circuits and systems—and how that damage can be avoided in areas such as military/space missions, nuclear applications, plasma damage, and X-ray-based techniques. It features top-notch international experts in industry and academia who address emerging detector technologies, circuit design techniques, new materials, and innovative system approaches.