Simulation And Characterization Of The Inductive Coupled Plasma Chemical Vapor Deposition Of Nano Sized Materials

The high cost of semiconductor fabrication equipment has traditionally represented a large barrier to entry for groups seeking to develop or commercialize novel micro- and nanoscale devices. Much of the cost barrier stems from the large size of the substrates processed in this equipment, and the associated complexity of maintaining consistent operation across the full substrate area. By scaling the substrate size down from the 150-300 mm diameter sizes commonly seen in today's production environments, the capital cost and physical footprint of tools for micro- and nanoscale fabrication can be dramatically decreased, while still retaining a similarly high level of performance. In this work, an ultra-low cost inductively-coupled plasma chemical vapor deposition (ICPCVD) system for processing substrates up to 50.8 mm (2") in diameter is presented. The ICPCVD system is built within a modular vacuum tool architecture that allows sections of the full tool to be easily and inexpensively replaced to adapt to new processing conditions or provide additional functionality. The system uses a non-pyrophoric mixture of silane (1.5% in helium) and low substrate temperatures ( : 150*C) to deposit uniform silicon-based films with a high quality comparable to films deposited in research-grade commercial tools. Using response surface methods, the performance of the ICP-CVD system has been characterized for both silicon dioxide and silicon nitride films, and repeatable control of the deposited film properties, including deposition rate, index of refraction, film stress, and density, has been demonstrated.

This volume provides the first comprehensive look at a pivotal new technology in integrated circuit fabrication. For some time researchers have sought alternate processes for interconnecting the millions of transistors on each chip because conventional physical vapor deposition can no longer meet the specifications of today's complex integrated circuits. Out of this research, ionized physical vapor deposition has emerged as a premier technology for the deposition of thin metal films that form the dense interconnect wiring on state-of-the-art microprocessors and memory chips. For the first time, the most recent developments in thin film deposition using ionized physical vapor deposition (I-PVD) are presented in a single coherent source. Readers will find detailed descriptions of relevant plasma source technology, specific deposition systems, and process recipes. The tools and processes covered include DC hollow cathode magnetrons, RF inductively coupled plasmas, and microwave plasmas that are used for depositing technologically important materials such as copper, tantalum, titanium, TiN, and aluminum. In addition, this volume describes the important physical processes that occur in I-PVD in a simple and concise way. The physical descriptions are followed by experimentally-verified numerical models that provide in-depth insight into the design and operation I-PVD tools. Practicing process engineers, research and development scientists, and students will find that this book's integration of tool design, process development, and fundamental physical models make it an indispensable reference. Key Features: The first comprehensive volume on ionized physical vapor deposition Combines tool design, process development, and fundamental physical understanding to form a complete picture of I-PVD Emphasizes practical applications in the area of IC fabrication and interconnect technology Serves as a guide to select the most appropriate technology for any deposition application *This single source saves time and effort by including comprehensive information at one's finger tips *The integration of tool design, process development, and fundamental physics allows the reader to quickly understand all of the issues important to I-PVD *The numerous practical applications assist the working engineer to select and refine thin film processes

In early 1987 I was attempting to develop a CVD-based tungsten process for Intel. At every step ofthe development, information that we were collecting had to be analyzed in light of theories and hypotheses from books and papers in many unrelated subjects. Thesesources were so widely different that I came to realize there was no unifying treatment of CVD and its subprocesses. More interestingly, my colleagues in the industry were from many disciplines (a surface chemist, a mechanical engineer, a geologist, and an electrical engineer werein my group). To help us understand the field of CVD and its players, some of us organized the CVD user's group of Northern California in 1988. The idea for writing a book on the subject occurred to me during that time. I had already organized my thoughts for a course I taught at San Jose State University. Later Van Nostrand agreed to publish my book as a text intended for students at the senior/first year graduate level and for process engineers in the microelectronics industry, This book is not intended to be bibliographical, and it does not cover every new material being studied for chemical vapor deposition. On the other hand, it does present the principles of CVD at a fundamental level while uniting them with the needs of the microelectronics industry.

Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced. Focuses on the plasma chemistry of amorphous silicon-based materials Links fundamental growth kinetics with the resulting semiconductor film properties and performance of electronic devices produced Features an international group of contributors Provides the first comprehensive coverage of the subject, from deposition technology to materials characterization to applications and implementation in state-of-the-art devices

This dissertation proposed the idea of "plasma-enhanced chemical vapor deposition on living substrates (PECVD on living substrates)" to bridge the gap between the thin film deposition technology and the biological and living substrates. This study focuses on the establishment of the knowledge and techniques necessary to perform "PECVD on living substrates" and contains three main aspects: development, characterization, and biological applications. First, a PECVD tool which can operate in ambient air and at low temperature was developed using a helium dielectric barrier discharge jet (DBD jet). It was demonstrated that various materials, such as polymeric, metallic, and composite films, can be readily synthesized through this technique. Second, the PMMA and copper films deposited using DBD jets were characterized. High-rate (22 nm/s), low-temperature (39 °C) PMMA deposition was achieved and the film surface morphology can be tailored by altering the discharge power. Conductive copper films with an electrical resistivity lower than 1 x 10−7 ohm-m were obtained through hydrogen reduction. Both PMMA and copper films can be grown on temperature-sensitive substrates, such as plastics, pork skin, and even fingernail. The electrical, optical, and imaging characterization of the DBD jets was also conducted and several new findings were reported. Multiple short-duration current pulses instead of only one broad pulse per half voltage cycle were observed when a dielectric substrate was employed. Each short-duration current pulse is induced by a leading ionization wave followed by the formation of a plasma channel. Precursor addition further changed the temporal sequence of the pulses. An increase in the power led to a mode change from a diffuse DBD jet to a concentrated one. This mode change showed significant dependence on the precursor type, tube size, and electrode configuration. These findings regarding the discharge characteristics can thus facilitate the development of DBD-jet operation strategies to improve the deposition efficacy. Finally, this technique was used to grow PMMA films onto agar to demonstrate one of its potential biological applications: sterile bandage deposition. The DBD jet with the film depositing ability enabled the surface to be not only efficiently sanitized but also protected by a coating from being reached by bacteria. The electronic version of this dissertation is accessible from http://hdl.handle.net/1969.1/148233