Proceedings Of The Symposium On Fundamental Aspects Of Electrochemical Deposition And Dissolution Including Modeling

The purpose of this Conference was to discuss the results of recent developments and the future prospect in science and technology of the field. The field has been growing and flourishing, while indicating many problems to be uncovered and solved. The conference was structured to encourage interaction and to stimulate the exchange of ideas to accomplish the above purpose. Key issues and materials related to the Conference were included as follows: • Molecular Assemblies in Solutions; • Fine Particles and Colloidal Dispersions; • Supramolecular Organized Films; • Nanostructural Solid Surfaces; • Industrial Applications and Products. The Conference comprised 2 plenary lectures, 42 invited lectures, 150 oral presentations and 266 poster presentations.

The papers included in this issue of ECS Transactions were originally presented in the symposium ¿Fundamentals of Energy Storage and Conversion¿, held during the 213th meeting of The Electrochemical Society, in Phoenix, Arizona from May 18 to 23, 2008.

The papers included in this issue of ECS Transactions were originally presented in the symposium ¿Nanomaterials for Energy Conversion and Storage¿, held during the 212th meeting of The Electrochemical Society, in Washington, DC, from October 7 to 12, 2007.

These 22 contributions concentrate primarily on newer applications of the staple EIS technique, and secondarily, on the more recent use of ENA in corrosion research. Papers treat experimental aspects of EIS and data analysis; EIS for investigating the protective properties and degradation of polymer coatings; and EIS in combination with other techniques to study specific corrosion phenomena, e.g., the corrosive rates of steel in soil environments. Mansfeld (U. of Southern California), et al., describe the use of both techniques to monitor the corrosion behavior of active and passive systems exposed to chloride media. The volume includes facts about the Electrochemical Society. Annotation copyrighted by Book News Inc., Portland, OR.

Retaining the comprehensive and in-depth approach that cemented the bestselling first edition's place as a standard reference in the field, the Handbook of Semiconductor Manufacturing Technology, Second Edition features new and updated material that keeps it at the vanguard of today's most dynamic and rapidly growing field. Iconic experts Robert Doering and Yoshio Nishi have again assembled a team of the world's leading specialists in every area of semiconductor manufacturing to provide the most reliable, authoritative, and industry-leading information available. Stay Current with the Latest Technologies In addition to updates to nearly every existing chapter, this edition features five entirely new contributions on... Silicon-on-insulator (SOI) materials and devices Supercritical CO2 in semiconductor cleaning Low-κ dielectrics Atomic-layer deposition Damascene copper electroplating Effects of terrestrial radiation on integrated circuits (ICs) Reflecting rapid progress in many areas, several chapters were heavily revised and updated, and in some cases, rewritten to reflect rapid advances in such areas as interconnect technologies, gate dielectrics, photomask fabrication, IC packaging, and 300 mm wafer fabrication. While no book can be up-to-the-minute with the advances in the semiconductor field, the Handbook of Semiconductor Manufacturing Technology keeps the most important data, methods, tools, and techniques close at hand.