Preparation and Characterization of Hydrogenated Amorphous-silicon Films Produced by Ion Plating and Hydrogenated Amorphous-boron Films Produced by Glow Discharge Decomposition

Preparation and Characterization of Hydrogenated Amorphous-silicon Films Produced by Ion Plating and Hydrogenated Amorphous-boron Films Produced by Glow Discharge Decomposition
Author: Franklin H. Cocks
Publisher:
Total Pages: 60
Release: 1981
Genre: Amorphous semiconductors
ISBN:


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Preparation and Characterization of Hydrogenated Amorphous Silicon Thin Films and Thin Film Solar Cells Produced by Ion Plating Techniques. Final Report, 1 January 1979-31 May 1980

Preparation and Characterization of Hydrogenated Amorphous Silicon Thin Films and Thin Film Solar Cells Produced by Ion Plating Techniques. Final Report, 1 January 1979-31 May 1980
Author:
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Total Pages:
Release: 1980
Genre:
ISBN:


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Ion plating techniques for the preparation of hydrogenated amorphous silicon thin films have been successfully developed. The technique involves essentially the evaporation of elemental silicon through a d.c. produced hydrogen plasma. In this way hydrogen has been successfully incorporated into amorphous silicon films in concentrations as high as 30 atomic percent. Infrared spectroscopy indicates the usual SiHx stretching mode at approximately 2000 cm−1. Further evidence for the bonding of hydrogen was obtained from ESR measurement of hydrogenated and unhydrogenated samples. The measured unpaired spin density was a factor of 25 less in the hydrogenated sample. The optical absorption edges of the hydrogenated films fell in the usual range between 1.7 and 1.9 eV. Electrical conductivity measurements indicated a substantial reduction in the density of defect states in the gap as expected. It was also shown that hydrogenated amorphous silicon prepared by ion-plating could be doped by co-evaporation of the dopant element during film deposition. Both co-evaporated phosphorous and co-evaporated bismuth have been found to substantially increase the dark conductivity of a-Si:H while shifting the Fermi level towards the conduction band edge. An x-ray method for estimating the density and hydrogen content of a-Si:H has been developed. The measurement of strain in a-Si:H thin films is discussed. (WHK).

Energy Research Abstracts

Energy Research Abstracts
Author:
Publisher:
Total Pages: 976
Release: 1983
Genre: Power resources
ISBN:


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Semiannual, with semiannual and annual indexes. References to all scientific and technical literature coming from DOE, its laboratories, energy centers, and contractors. Includes all works deriving from DOE, other related government-sponsored information, and foreign nonnuclear information. Arranged under 39 categories, e.g., Biomedical sciences, basic studies; Biomedical sciences, applied studies; Health and safety; and Fusion energy. Entry gives bibliographical information and abstract. Corporate, author, subject, report number indexes.

Solar Energy Update

Solar Energy Update
Author:
Publisher:
Total Pages: 688
Release: 1981
Genre: Solar energy
ISBN:


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Energy Research Abstracts

Energy Research Abstracts
Author:
Publisher:
Total Pages: 510
Release: 1983
Genre: Power resources
ISBN:


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