Plasma Enhanced Chemical Vapor Deposition Pecvd Method Of Forming Vanadium Oxide Films And Vanadium Oxide Thin Films Prepared Thereby

A method is disclosed of forming a vanadium oxide film on a substrate utilizing plasma enhanced chemical vapor deposition. The method includes positioning a substrate within a plasma reaction chamber and then forming a precursor gas comprised of a vanadium-containing chloride gas in an inert carrier gas. This precursor gas is then mixed with selected amounts of hydrogen and oxygen and directed into the reaction chamber. The amounts of precursor gas, oxygen and hydrogen are selected to optimize the final properties of the vanadium oxide film An rf plasma is generated within the reaction chamber to chemically react the precursor gas with the hydrogen and the oxygen to cause deposition of a vanadium oxide film on the substrate while the chamber deposition pressure is maintained at about one torr or less. Finally, the byproduct gases are removed from the plasma reaction chamber.

Plasma-enhanced chemical vapor deposition (PECVD) of thin films has generated considerable interest in recent years. Much of this interest stems from the ability of high energy electrons in rf glow discharges (plasmas) to break chemical bonds and thereby promote chemical reactions at or near room temperature. Such considerations are particularly important when depositing films onto substrates which cannot withstand high temperatures. A further advantage, however, is that the highly reactive plasma atmosphere can result in the formation of materials with unique chemical, physical, and electrical properties. In this paper, the plasma-enhanced deposition of oxide, nitride, transition metal, and transition metal silicide films will be discussed. Emphasis will be placed upon the chemistry occurring in the glow discharge, and on the manner in which this chemistry controls the resulting film properties.

Properties of thin films depend strongly upon the deposition technique and conditions chosen. In order to achieve the desired film, optimum deposition conditions have to be found by carrying out experiments in a trial-and error fashion with varying parameters. The data obtained on one growth apparatus are often not transferable to another. This is especially true for film deposition processes using a cold plasma because of our poor under standing of the mechanisms. Relatively precise studies have been carried out on the role that physical effects play in film formation such as sputter deposition. However, there are many open questions regarding processes that involve chemical reactions, for example, reactive sputter deposition or plasma enhanced chemical vapor deposition. Much further research is re quired in order to understand the fundamental deposition processes. A sys tematic collection of basic data, some of which may be readily available in other branches of science, for example, reaction cross sections for gases with energetic electrons, is also required. The need for pfasma deposition techniques is felt strongly in industrial applications because these techniques are superior to traditional thin-film deposition techniques in many ways. In fact, plasma deposition techniques have developed rapidly in the semiconductor and electronics industries. Fields of possible application are still expanding. A reliable plasma reactor with an adequate in situ system for monitoring the deposition conditions and film properties must be developed to improve reproducibility and pro ductivity at the industrial level.

The book offers comprehensive coverage of the broad range of scientific knowledge in the fields of advances in induction and microwave heating of mineral and organic materials. Beginning with industry application in many areas of practical application to mineral materials and ending with raw materials of agriculture origin the authors, specialists in different scientific area, present their results in the two sections: Section 1-Induction and Microwave Heating of Mineral Materials, and Section 2-Microwave Heating of Organic Materials.

This book provides an overview of chemical vapor deposition (CVD) methods and recent advances in developing novel materials for application in various fields. CVD has now evolved into the most widely used technique for growth of thin films in electronics industry. Several books on CVD methods have emerged in the past, and thus the scope of this book goes beyond providing fundamentals of the CVD process. Some of the chapters included highlight current limitations in the CVD methods and offer alternatives in developing coatings through overcoming these limitations.