Plasma Enhanced Chemical Vapor Deposition Of Titanium Oxide Thin Films For Dielectric Applicaitons

Turn to this new second edition for an understanding of the latest advances in the chemical vapor deposition (CVD) process. CVD technology has recently grown at a rapid rate, and the number and scope of its applications and their impact on the market have increased considerably. The market is now estimated to be at least double that of a mere seven years ago when the first edition of this book was published. The second edition is an update with a considerably expanded and revised scope. Plasma CVD and metallo-organic CVD are two major factors in this rapid growth. Readers will find the latest data on both processes in this volume. Likewise, the book explains the growing importance of CVD in production of semiconductor and related applications.

Valuable insights into the extraction, production, and properties of a large number of natural and synthetic oxides utilized in applications worldwide from ceramics, electronic components, and coatings This handbook describes each of the major oxides chronologically—starting from the processes of extraction of ores containing oxides, their purification and transformations into pure alloyed powders, and their appropriate characterization up to the processes of formation of 2D films by such methods as PVD, CVD, and coatings by thermal spraying or complicated 3D objects by sintering and rapid prototyping. The selection of oxides has been guided by the current context of industrial applications. An important point that is considered in the book concerns the strategic aspects of oxides. Some oxides (e.g. rare earth ones) become more expensive due to the growing demand for them, others, because of the strategic importance of countries producing raw materials and the countries that are using them. Industrial Chemistry of Oxides for Emerging Applications provides readers with everything they need to know in 7 chapters that cover: technical and economical importance of oxides in present and future; fundamentals of oxides manufacturing; extraction, properties, and applications of Al2O3; extraction, properties, and applications of ZrO2; synthesis, properties, and applications of YBaCu2O7x; extraction, properties, and applications of TiO2; and synthesis, properties, and application of hydroxyapatite. Presents the extraction, production, and properties of a large fraction of oxides applications worldwide, both natural as well as synthetic multi‐oxides Covers a very important segment of many industrial processes, such as refractories and piezoelectric oxides—both applications constituting very large market segments Developed from a lecture course given by the authors for over a decade Industrial Chemistry of Oxides for Emerging Applications is an excellent text for university professors and teachers, and graduate and postgraduate students with a solid background in physics and chemistry.

Thin titanium dioxide films were produced by metalorganic chemical vapor deposition on sapphire(0001) in an ultrahigh vacuum (UHV) chamber. A method was developed for producing controlled submonolayer depositions from titanium isopropoxide precursor. Film thickness ranged from 0.1 to 2.7 nm. In situ X-ray photoelectron spectroscopy (XPS) was used to determine film stoichiometry with increasing thickness. The effect of isothermal annealing on desorption was evaluated. Photoelectron peak shapes and positions from the initial monolayers were analyzed for evidence of interface reaction. Deposition from titanium isopropoxide is divided into two regimes: depositions below and above the pyrolysis temperature. This temperature was determined to be 300 deg C. Controlled submonolayers of titanium oxide were produced by cycles of dosing with titanium isopropoxide vapor below and annealing above 300 deg C. Precursor adsorption below the pyrolysis temperature was observed to saturate after 15 minutes of dosing. The quantity absorbed was shown to have an upper limit of one monolayer. The stoichiometry of thin films grown by the cycling method were determined to be TiO2. Titanium dioxide film stoichiometry was unaffected by isothermal annealing at 700 deg C. Annealing produced a decrease in film thickness. This was explained as due to desorption. Desorption ceased at approximately 2.5 to 3 monolayers, suggesting bonding of the initial monolayers of film to sapphire is stronger than to itself. Evidence of sapphire reduction at the interface by the depositions was not observed. The XPS O is peak shifted with increased film thickness. The shifts were consistent with oxygen in sapphire and titanium dioxide having different O is photoelectron peak positions. Simulations showed the total shifts for thin films ranging in thickness of 0.1 to 2.7 nm to be -0.99 to -1.23 eV. Thick films were produced for comparison.