Passive And Active Circuits In Cmos Technology For Rf Microwave And Millimeter Wave Applications

The permeation of CMOS technology to radio frequencies and beyond has fuelled an urgent need for a diverse array of passive and active circuits that address the challenges of rapidly emerging wireless applications. While traditional analog based design approaches satisfy some applications, the stringent requirements of newly emerging applications cannot necessarily be addressed by existing design ideas and compel designers to pursue alternatives. One such alternative, an amalgamation of microwave and analog design techniques, is pursued in this work. A number of passive and active circuits have been designed using a combination of microwave and analog design techniques. For passives, the most crucial challenge to their CMOS implementation is identified as their large dimensions that are not compatible with CMOS technology. To address this issue, several design techniques 0́3 including multi-layered design and slow wave structures 0́3 are proposed and demonstrated through experimental results after being suitably tailored for CMOS technology. A number of novel passive structures - including a compact 10 GHz hairpin resonator, a broadband, low loss 25-35 GHz Lange coupler, a 25-35 GHz thin film microstrip (TFMS) ring hybrid, an array of 0.8 nH and 0.4 nH multi-layered high self resonant frequency (SRF) inductors are proposed, designed and experimentally verified. A number of active circuits are also designed and notable experimental results are presented. These include 3-10 GHz and DC-20 GHz distributed low noise amplifiers (LNA), a dual wideband Low noise amplifier and 15 GHz distributed voltage controlled oscillators (DVCO). Distributed amplifiers are identified as particularly effective in the development of wideband receiver front end sub-systems due to their gain flatness, excellent matching and high linearity. The most important challenge to the implementation of distributed amplifiers in CMOS RFICs is identified as the issue of their miniaturization. This problem is solved by using integrated multi-layered inductors instead of transmission lines to achieve over 90% size compression compared to earlier CMOS implementations. Finally, a dual wideband receiver front end sub-system is designed employing the miniaturized distributed amplifier with resonant loads and integrated with a double balanced Gilbert cell mixer to perform dual band operation. The receiver front end measured results show 15 dB conversion gain, and a 1-dB compression point of -4.1 dBm in the centre of band 1 (from 3.1 to 5.0 GHz) and -5.2 dBm in the centre of band 2 (from 5.8 to 8 GHz) with input return loss less than 10 dB throughout the two bands of operation.

This book compiles and presents the research results from the past five years in mm-wave Silicon circuits. This area has received a great deal of interest from the research community including several university and research groups. The book covers device modeling, circuit building blocks, phased array systems, and antennas and packaging. It focuses on the techniques that uniquely take advantage of the scale and integration offered by silicon based technologies.

Design and Modeling of Millimeter-wave CMOS Circuits for Wireless Transceivers describes in detail some of the interesting developments in CMOS millimetre-wave circuit design. This includes the re-emergence of the slow-wave technique used on passive devices, the license-free 60GHz band circuit blocks and a 76GHz voltage-controlled oscillator suitable for vehicular radar applications. All circuit solutions described are suitable for digital CMOS technology. Digital CMOS technology developments driven by Moore’s law make it an inevitable solution for low cost and high volume products in the marketplace. Explosion of the consumer wireless applications further makes this subject a hot topic of the day. The book begins with a brief history of millimetre-wave research and how the silicon transistor is born. Originally meant for different purposes, the two technologies converged and found its way into advanced chip designs. The second part of the book describes the most important passive devices used in millimetre-wave CMOS circuits. Part three uses these passive devices and builds circuit blocks for the wireless transceiver. The book completes with a comprehensive list of references for further readings. Design and Modeling of Millimeter-wave CMOS Circuits for Wireless Transceivers is useful to show the analogue IC designer the issues involved in making the leap to millimetre-wave circuit designs. The graduate student and researcher can also use it as a starting point to understand the subject or proceed to innovative from the works described herein.

In the high frequency world, the passive technologies required to realize RF and microwave functionality present distinctive challenges. SAW filters, dielectric resonators, MEMS, and waveguide do not have counterparts in the low frequency or digital environment. Even when conventional lumped components can be used in high frequency applications, their behavior does not resemble that observed at lower frequencies. RF and Microwave Passive and Active Technologies provides detailed information about a wide range of component technologies used in modern RF and microwave systems. Updated chapters include new material on such technologies as MEMS, device packaging, surface acoustic wave (SAW) filters, bipolar junction and heterojunction transistors, and high mobility electron transistors (HMETs). The book also features a completely rewritten section on wide bandgap transistors.

Microwave and Millimeter Wave Circuits and Systems: Emerging Design, Technologies and Applications provides a wide spectrum of current trends in the design of microwave and millimeter circuits and systems. In addition, the book identifies the state-of-the art challenges in microwave and millimeter wave circuits systems design such as behavioral modeling of circuit components, software radio and digitally enhanced front-ends, new and promising technologies such as substrate-integrated-waveguide (SIW) and wearable electronic systems, and emerging applications such as tracking of moving targets using ultra-wideband radar, and new generation satellite navigation systems. Each chapter treats a selected problem and challenge within the field of Microwave and Millimeter wave circuits, and contains case studies and examples where appropriate. Key Features: Discusses modeling and design strategies for new appealing applications in the domain of microwave and millimeter wave circuits and systems Written by experts active in the Microwave and Millimeter Wave frequency range (industry and academia) Addresses modeling/design/applications both from the circuit as from the system perspective Covers the latest innovations in the respective fields Each chapter treats a selected problem and challenge within the field of Microwave and Millimeter wave circuits, and contains case studies and examples where appropriate This book serves as an excellent reference for engineers, researchers, research project managers and engineers working in R&D, professors, and post-graduates studying related courses. It will also be of interest to professionals working in product development and PhD students.

Integrated 60GHz RF Beamforming in CMOS describes new concepts and design techniques that can be used for 60GHz phased array systems. First, general trends and challenges in low-cost high data-rate 60GHz wireless system are studied, and the phased array technique is introduced to improve the system performance. Second, the system requirements of phase shifters are analyzed, and different phased array architectures are compared. Third, the design and implementation of 60GHz passive and active phase shifters in a CMOS technology are presented. Fourth, the integration of 60GHz phase shifters with other key building blocks such as low noise amplifiers and power amplifiers are described in detail. Finally, this book describes the integration of a 60GHz CMOS amplifier and an antenna in a printed circuit-board (PCB) package.

The thesis presents advanced circuits in CMOS for microwave and millimeter-wave communications. First, low-noise W-band amplifiers and mW-level 170-200 GHz output doublers in 45-nm Semiconductor-On-Insulator (SOI) CMOS technology are presented. The transistors are modeled using R/C extraction and full electromagnetic modeling. The measured ft of a 30x1-[mu]m transistor is 200-210 GHz at a bias current of 0.3-0.5 mA/[mu]m. A 3-stage W-band amplifier shows a record noise figure of 6.0 dB and a saturated output power of 7.5-8.0 dBm with a power added efficiency of 9%, all at 95 GHz. The G-band balanced doubler results in an output power of 1 mW at 180 GHz. A W-band amplifier/G-band doubler chip is also demonstrated, with a peak output power of 0.5-1 mW at 170-195 GHz and a conversion gain of -2 - -1 dB. This work shows that 45-nm SOI CMOS, built for digital and mixed-signal applications, results in state-of-the-art performance at W-band and G-band. Next, a miniature DC-70 GHz single-pole four-throw (SP4T), 50-70 GHz single-pole double-throw (SPDT), and single-pole four-throw (SP4T) switches built in a low-cost 0.13-[mu]m CMOS process are presented. The DC-70 GHz SP4T switch is based on a series-shunt design with input and output matching circuits. Deep n-well (also called triple-well) CMOS transistors are used to minimize the substrate coupling. Also, deep trench isolation is used between the different ports to minimize the port-to-port coupling. The SP4T results in a measured insertion loss of less than 3.5 dB up to 67 GHz with an isolation of greater than 25 dB. The measured port-to-port coupling is less than 28 dB up to 67 GHz. The measured P1dB and IIP3 are independent of frequency and are 9-10 dBm and 20-21 dBm, respectively. The active chip area is 0.24x0.23 mm2. When this work was published, it represented the widest bandwidth SP4T switch in any CMOS technology to-date. The 50-70 GHz single-pole double-throw (SPDT) and single-pole four-throw (SP4T) switches are based on tuned [lambda]/4 designs with output matching networks. High substrate resistance together with deep trenches and isolation moats are used for low insertion loss. The SPDT and SP4T switches result in a measured insertion loss of 2.0 and 2.3 dB at 60 GHz, with an isolation of> 32 dB and> 22 dB, respectively. The measured output port-to-port isolation is> 27 dB for both designs. The P1dB is 13-14 dBm with a measured IIP3 of> 23 dBm for both switches. Both designs have a return loss better than -10 dB at all ports from 50 to 70 GHz. The active chip area is 0.39x0.32 mm2 (SPDT) and 0.59x0.45 mm2 (SP4T). When this work was published, it presented the lowest loss 60 GHz SPDT and SP4T switches and also the highest isolation SPDT switch in any CMOS technology to-date. In another project, 5-6 GHz 8x8 and Ku-band 4x4 Butler matrices are presented in a 0.13-[mu]m CMOS implementation. The 8x8 design results in an insertion loss of 3.5 dB at 5.5 GHz, with a bandwidth of 5-6 GHz and no power consumption. The chip area is 2.5x1.9 mm2 including all pads. The 8x8 matrix is mounted on a Teflon board with 8-antennas, and the measured patterns agree well with theory and show an isolation of> 12 dB at 5-6 GHz. The 4x4 design results in an insertion loss of 2.4 dB at 12 GHz with a bandwidth of 11-13 GHz. The chip area is only 0.85x0.65 mm2 including all pads, and the power consumption is ~0 mA from a 1.5 V power supply. The 4x4 matrix is mounted on a Teflon board with 4-antennas, and the measured patterns agree well with theory and show an isolation of> 11 dB at 11-13 GHz. CMOS Butler matrices are an excellent candidate for MIMO systems, and can also replace small-element phased-array systems for high-gain transceivers. The applications areas are in high data-rate communications. Finally, a contactless, microwave-based gamma ray detector for detecting low-energy gamma ray photons is presented as an appendix. The detection is based on a microwave cavity perturbation method, and uses a reflection-type cavity resonator with a detector-grade CZT crystal. The reflected power from the cavity is measured and this monitors the changes in the photoconductivity of the CZT crystal in the presence of a gamma-ray. A gamma ray detection sensitivity of

Comprehensive resource presenting the fundamentals and state of the art concepts, design examples, relevant components, and technology Slow-wave Microwave and mm-wave Passive Circuits presents the fundamentals and state of the art concepts, design examples, relevant components, and technology of the subject, plus examples of circuit layout optimization using slow-wave circuits. In one volume, the recent advances in aspects of the slow-wave concept are covered. Potential applications include automotive radars, medical and security applications, and 5G and future 6G for very high-speed communications. The text considers a variety of slow-wave structures and associated concepts which are useful for circuit design. Each structure is electrically modeled with clear illustration. The highly qualified authors show that the use of the slow-wave concept can, in some cases, improve the performance of passive circuits. The techniques proposed make it possible to reduce the size and/or the performance of the circuits, with a beneficial cost-saving effect on semiconductor materials. Concepts are applied to several technologies, namely CMOS, PCB (Printed Circuit Board) and nanowires. Sample topics covered in Slow-wave Microwave and mm-wave Passive Circuits include: Concepts of energy storage with examples of slow-wave CPW (S-CPW), slow-wave SIW (SW-SIW), and slow-wave microstrip (S-MS), Transmission line topology and application in integrated technologies (CMOS), including possibilities offered by the BEOL (Back-End-Of-Line), Effect of the geometrical dimensions on the transmission line parameters (Zc, α, εreff, and Q) and comparisons between conventional CPW and CPS, and slow-wave CPW and CPS, Performance of slow-wave coupled lines and comparison with conventional microstrip coupled lines. Slow-wave Microwave and mm-wave Passive Circuits is a highly useful resource on the subject for graduate students (best complemented with a basic book on microwaves), engineers, and researchers. The text is also valuable for physicists wishing to implement comparable techniques in optics or mechanics.

Fully updated and including entirely new chapters, this Second Edition provides in-depth coverage of the different types of RF and microwave circuit elements, including inductors, capacitors, resistors, transformers, via holes, airbridges, and crossovers. Featuring extensive formulas for lumped elements, design trade-offs, and an updated and current list of references, the book helps you understand the value and usefulness of lumped elements in the design of RF, microwave and millimeter wave components and circuits. You’ll find a balanced treatment between standalone lumped elements and their circuits using MICs, MMICs and RFICs technologies. You’ll also find detailed information on a broader range RFICs that was not available when the popular first edition was published. The book captures – in one consolidated volume -- the fundamentals, equations, modeling, examples, references and overall procedures to design, test and produce microwave components that are indispensable in industry and academia today. With its superb organization and expanded coverage of the subject, this is a must-have, go-to resource for practicing engineers and researchers in industry, government and university and microwave engineers working in the antenna area. Students will also find it a useful reference with its clear explanations, many examples and practical modeling guidelines.

By 1990 the wireless revolution had begun. In late 2000, Mike Golio gave the world a significant tool to use in this revolution: The RF and Microwave Handbook. Since then, wireless technology spread across the globe with unprecedented speed, fueled by 3G and 4G mobile technology and the proliferation of wireless LANs. Updated to reflect this tremendous growth, the second edition of this widely embraced, bestselling handbook divides its coverage conveniently into a set of three books, each focused on a particular aspect of the technology. Six new chapters cover WiMAX, broadband cable, bit error ratio (BER) testing, high-power PAs (power amplifiers), heterojunction bipolar transistors (HBTs), as well as an overview of microwave engineering. Over 100 contributors, with diverse backgrounds in academic, industrial, government, manufacturing, design, and research reflect the breadth and depth of the field. This eclectic mix of contributors ensures that the coverage balances fundamental technical issues with the important business and marketing constraints that define commercial RF and microwave engineering. Focused chapters filled with formulas, charts, graphs, diagrams, and tables make the information easy to locate and apply to practical cases. The new format, three tightly focused volumes, provides not only increased information but also ease of use. You can find the information you need quickly, without wading through material you don’t immediately need, giving you access to the caliber of data you have come to expect in a much more user-friendly format.