Materials Issues In Vacuum Microelectronics Volume 509

The field of vacuum microelectronics (VME) has experienced tremendous growth. VME devices benefit from collision-free motion of electrons in vacuum, enabling faster modulation and higher electron energies than possible with solid-state structures. In addition, VME devices can operate in a wide temperature range (4

The 31 papers, about half of the symposium's presentations, were selected to provide a representative sampling of the present status of materials used in vacuum microelectronics. They range across all aspects of electron field emission from theory and physical mechanisms to device structure, but many focus on the fabrication, characterization, and modeling of electron emissive materials. The sections cover field-emitter arrays and applications, carbon and wide-bandgap cathodes, and other cathode materials. Reproduced from typescripts. Annotation copyrighted by Book News, Inc., Portland, OR

This book contains the proceedings of two symposia - 'Integration of Dissimilar Materials in Micro- and Optoelectronics' and 'III-V and SiGe Group IV Device/IC Processing Challenges for Commercial Applications'. The publication stems from the desire to achieve new levels of device functionality and higher levels of performance via integration of devices based on dissimilar semiconductors, where the constraint of lattice-matching on the breadth of attainable devices can be reduced. It covers fundamental topics germane to integration of a wide range of dissimilar materials spanning wide-bandgap III-V nitrides, III-V/Si integration, II-VI and II-VI/III-V compounds, heterovalent structures, oxides, photonic bandgap structures and others. Topics such as compliancy, dislocation control, selective area growth, bonding methodologies, etc. are featured. It also addresses processing issues in the manufacturing of III-V and Si-based heterostructures for commercial products. Here, the success enjoyed by silicon germanium technology is contrasted by the promise of silicon-carbon alloys which have opportunities and challenges for the new generation of process developers.

Participants of the symposium held in April 1998 in San Francisco as part of the 1998 MRS Spring Meeting cleared the fog at least on some aspects of solid-state diffusion, particularly experimental and simulation techniques that provide access to atomic-scale mechanisms of diffusion in diverse classes of crystalline materials. The 68 contributions (including 18 invited talks) added to the knowledge base in several key areas: diffusion mechanisms in metals and alloys, in intermetallic compounds, and in semiconductors; grain boundary and surface diffusion, and diffusion in quasicrystals; and diffusion and ionic conductivity in ionic materials. Annotation copyrighted by Book News, Inc., Portland, OR

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.