Low Temperature Atmospheric Pressure Chemical Vapor Deposition Of Group 14 Oxide Films
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Release | : 2005 |
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Download Low Temperature Atmospheric Pressure Chemical Vapor Deposition of Group 14 Oxide Films Book in PDF, Epub and Kindle
Depositions of high quality SiO[sub 2] and SnO[sub 2] films from the reaction of homoleptic amido precursors M(NMe[sub 2])4 (M = Si, Sn) and oxygen were carried out in an atmospheric pressure chemical vapor deposition r. The films were deposited on silicon, glass and quartz substrates at temperatures of 250 to 450C. The silicon dioxide films are stoichiometric (O/Si = 2.0) with less than 0.2 atom % C and 0.3 atom % N and have hydrogen contents of 9 [plus-minus] 5 atom %. They are deposited with growth rates from 380 to 900 [angstrom]/min. The refractive indexes of the SiO[sub 2] films are 1.46, and infrared spectra show a possible Si-OH peak at 950 cm[sup [minus]1]. X-Ray diffraction studies reveal that the SiO[sub 2] film deposited at 350C is amorphous. The tin oxide films are stoichiometric (O/Sn = 2.0) and contain less than 0.8 atom % carbon, and 0.3 atom % N. No hydrogen was detected by elastic recoil spectroscopy. The band gap for the SnO[sub 2] films, as estimated from transmission spectra, is 3.9 eV. The resistivities of the tin oxide films are in the range 10[sup [minus]2] to 10[sup [minus]3] [Omega]cm and do not vary significantly with deposition temperature. The tin oxide film deposited at 350C is cassitterite with some (101) orientation.
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Total Pages | : 392 |
Release | : 1994 |
Genre | : Aeronautics |
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Download Scientific and Technical Aerospace Reports Book in PDF, Epub and Kindle
Author | : Hsiao-Hui Chen |
Publisher | : |
Total Pages | : 336 |
Release | : 1991 |
Genre | : Thin film devices |
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Download Formation of Low Temperature Silicon Dioxide Films Using Chemical Vapor Deposition Book in PDF, Epub and Kindle
"Low Temperature Oxide (LTO) thin films were prepared using a Low Pressure Chemical Vapor Deposition process. The process was characterized by applying traditional statistical studies and response surface technique. The uniformities within wafer and from wafer to wafer were examined by determining the mean and the standard deviation of films thicknesses. Response surface methodology was employed to determine the optimum process conditions. Time, temperature and gas flow ratio were used as the experimental factors. Index of refraction and deposition rate were used as the experimental responses. Additionally, etch rate, density, dielectric constant and infrared (IR) spectra were found for the silicon dioxide films prepared at the determined optimum condition. The IR spectra were obtained by employing Fourier Transform Infrared Spectroscopy (FTIR). The average deposition rate was found to be 46 A per minute and the average index of refraction was 1.44. The calculated density, activation energy, etch rate, dielectric constant and dielectric strength agreed with reported values. A double metal test run was performed using LTO oxide. The results indicated that the recommended baseline LTO process is suitable for multilayer metallization processes."--Abstract.
Author | : James William Proscia |
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Total Pages | : 528 |
Release | : 1988 |
Genre | : Thin films |
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Download Atmospheric Pressure Chemical Vapor Deposition of Tin Oxide Films and the Surface Photovoltage Measurements of Amorphous Silicon Book in PDF, Epub and Kindle
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Total Pages | : 782 |
Release | : 1995 |
Genre | : Power resources |
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Download Energy Research Abstracts Book in PDF, Epub and Kindle
Author | : Esmail Issa |
Publisher | : BoD – Books on Demand |
Total Pages | : 243 |
Release | : 2022-01-01 |
Genre | : Technology & Engineering |
ISBN | : 3863602633 |
Download Novel Reactor Design and Method for Atmospheric Pressure Chemical Vapor Deposition of Micro and Nano SiO2-x Films in Photovoltaic Applications Book in PDF, Epub and Kindle
A laboratory-scale reactor and a novel method for the atmospheric pressure chemical vapor deposition (APCVD) of SiO2-x films are developed. The deposited films are investigated to synthesize heterogeneously upon the substrate surface with the elimination of the so-called gas-phase reaction, hence preventing parasitic oxide particles upon the substrate surface and the reactor inner walls. The films are extensively inspected in terms of chemical and optical properties and utilized for crystalline silicon solar cell applications. Simple reactor design with low safety measures, a wide range of deposition rates, high film resilience, and stability for the intended applications are successfully achieved. The newly developed APCVD SiO2-x is proven to protect the Si wafer surface against texturing in alkaline and acidic solutions. Electroplated metallization schemes of heterojunction and passivated emitter rear contact solar cells are examined with the use of the SiO2-x as a masking layer in the grid electrode-free area.
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Total Pages | : 1754 |
Release | : 1994 |
Genre | : Government reports announcements & index |
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Download Government Reports Annual Index Book in PDF, Epub and Kindle
Author | : Xiaodong Wang |
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Total Pages | : 106 |
Release | : 1989 |
Genre | : Integrated circuits |
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Download Process and System Considerations for Low Temperature Oxide Low Pressure Chemical Vapor Deposition Book in PDF, Epub and Kindle
Author | : Juho Song |
Publisher | : |
Total Pages | : 236 |
Release | : 1996 |
Genre | : Chemical vapor deposition |
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Download Low Temperature Silicon Oxide and Flourinated Silicon Oxide Films Prepared by Plasma Enhanced Chemical Vapor Deposition Using Disilane as Silicon Precursor Book in PDF, Epub and Kindle
Author | : Lachlan E. Black |
Publisher | : Springer |
Total Pages | : 222 |
Release | : 2016-04-15 |
Genre | : Technology & Engineering |
ISBN | : 3319325213 |
Download New Perspectives on Surface Passivation: Understanding the Si-Al2O3 Interface Book in PDF, Epub and Kindle
The book addresses the problem of passivation at the surface of crystalline silicon solar cells. More specifically, it reports on a high-throughput, industrially compatible deposition method for Al2O3, enabling its application to commercial solar cells. One of the main focus is on the analysis of the physics of Al2O3 as a passivating dielectric for silicon surfaces. This is accomplished through a comprehensive study, which moves from the particular, the case of aluminium oxide on silicon, to the general, the physics of surface recombination, and is able to connect theory with practice, highlighting relevant commercial applications.