Low Pressure Chemical Vapor Deposition Of Silicon Dioxide And Phosphosilicate Glass Thin Films

This comprehensive monograph summarises the 30-year studies of borophosphosilicate glass (BPSG) thin film used in electronic technologies, including the authors personal experience with the film deposition, characterisation, and implementation in microelectronic technology. The main core of the monograph is the interrelation of chemical vapour deposition (CVD) kinetic features, thin film material properties, and electronic device technology aspects. Part one of the monograph is devoted to the analysis of thin film synthesis, such as: CVD methodology and BPSG film processes, silicon dioxide and glass film growth kinetics, CVD step coverage and gap-fill features. Part two of the book is a description of BPSG film properties, film structure, glass flow capability, BPSG film-moisture interaction and the film defect formation phenomenon. A number of experimental data are presented and discussed in detail.

"Low Temperature Oxide (LTO) thin films were prepared using a Low Pressure Chemical Vapor Deposition process. The process was characterized by applying traditional statistical studies and response surface technique. The uniformities within wafer and from wafer to wafer were examined by determining the mean and the standard deviation of films thicknesses. Response surface methodology was employed to determine the optimum process conditions. Time, temperature and gas flow ratio were used as the experimental factors. Index of refraction and deposition rate were used as the experimental responses. Additionally, etch rate, density, dielectric constant and infrared (IR) spectra were found for the silicon dioxide films prepared at the determined optimum condition. The IR spectra were obtained by employing Fourier Transform Infrared Spectroscopy (FTIR). The average deposition rate was found to be 46 A per minute and the average index of refraction was 1.44. The calculated density, activation energy, etch rate, dielectric constant and dielectric strength agreed with reported values. A double metal test run was performed using LTO oxide. The results indicated that the recommended baseline LTO process is suitable for multilayer metallization processes."--Abstract.

This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques. Provides an all-new sequel to the 1978 classic, Thin Film Processes Introduces new topics, and several key topics presented in the original volume are updated Emphasizes practical applications of major thin film deposition and etching processes Helps readers find the appropriate technology for a particular application

The most recent developments and techniques in thin film deposition for high technology applications are described by 23 authorities in the field.