Infrared Applications Of Semiconductors Ii Symposium Held In Boston Massachusetts On December 1 4 1997

A variety of semiconductor materials have been used to fabricate diode lasers for the mid-infrared. Lasers using the lead salts (e.g., PbSnTe) have been commercially available for sometime. Mid-infrared emitting III-V semiconductors (e.g., InGaAsSb) have superior thermal conductivity, and diode lasers fabricated from these material offer higher powers, of particular interest are the III-V semiconductor laser based on type-II superlattices (e.g., InAs/GaInSb). Among the many unique properties attributed to type-II superlattices are small hole mass, reduced Auger recombination, and less inter-valence band absorption-all important for better lasers. Recent results with Quantum Cascade-type lasers are also very encouraging. This paper summarizes the important semiconductor materials for mid-infrared lasers with emphasis on the type-II superlattices.

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

The symposium entitled "Infrared Applications of Semiconductors- Materials, Processing and Devices" was held on December 2-6, 1996, in Boston, Massachusetts, as Symposium 0 of the 1996 MRS Meeting, and was a joint session with the 1996 International Conference on Electronic Materials. The symposium focused on recent investigations based on III-V, II- VI, and IV bulk semiconductors, quantum wells, and superlattices for infrared detectors, emitters, sources, and materials. Internationally-known experts in the subject presented 86 oral papers covering this diverse field. The resulting 68 papers published in this proceedings are a representative snapshot of the fast-changing field of novel structures and processes that can be used to achieve high-performance Infrared detectors, imaging arrays, infrared lasers and sources.

Developments in lasers continue to enable progress in many areas such as eye surgery, the recording industry and dozens of others. This book presents citations from the book literature for the last 25 years and groups them for ease of access which is also provided by subject, author and titles indexes.

This book is unique in that it combines for the first time the infrared detectors and infrared lasers and emitters in one volume. It is merely a step, however, in a very fast-changing field, toward achieving an understanding of novel structures that can be used for high-performance infrared detectors, imaging arrays, infrared lasers and sources. Internationally-known experts discuss recent advances in materials structures, processing and device performances, with presentations crossing materials and discipline boundaries. Recent investigations based on III-V, II-VI and IV bulk semiconductors, quantum wells, and superlattices for long-wavelength infrared detectors, emitters, sources and materials are featured. Topics include: antimonide-related materials and devices; quantum wells and devices; quantum infrared detectors; HgCdTe - materials, devices and processing; nonlinear and parametric oscillator material; interdiffusion in heterostructures and related topics.