High Average Brightness Broad Area Quantum Cascade Lasers

Quantum Cascade Lasers are a novel semiconductor light source with the unique property of wavelength tunability over the mid-infrared and terahertz range of frequencies. Advances since their first demonstration in 1994 have led to highly efficient designs capable of continuous room temperature operation. In lieu of increased advances in laser core efficiency, power scaling with broad area quantum cascade lasers has demonstrated enhanced continuous power. This initial work is used as a starting point for continuing advances in average brightness of quantum cascade lasers. A figure of merit calculation reliably predicts to within parts in thousands the qualitative beam profile of continuously driven and high duty cycle devices. Further, a model is developed to project performance not only in continuously driven conditions, but also in variable duty cycles. This is combined with the figure of merit calculation to guide designs for optimized average brightness.

Quantum cascade lasers are unipolar semiconductor lasers that offer a unique combination of compact size, high efficiency, high optical power, and flexibility to achieve a targeted emission wavelength with the same laser core material composition, employing so-called bandgap engineering. Since their invention in 1994, watt-level CW power with 5 to 20 % wallplug efficiency was demonstrated for QCLs throughout the entire 4 to 12 [micrometer] range, which makes QCLs very attractive for a number of practical applications. Our earlier work on broad-area QCLs emitting in the 4.6 [micrometer] to 5.7 [micrometer] spectral range demonstrated that CW power scaling with lateral device dimensions is an effective approach to increasing QCL power. First experimental and numerical data for short-wavelength (

Mid-infrared Optoelectronics: Materials, Devices, and Applications addresses the new materials, devices and applications that have emerged over the last decade, along with exciting areas of research. Sections cover fundamentals, light sources, photodetectors, new approaches, and the application of mid-IR devices, with sections discussing LEDs, laser diodes, and quantum cascade lasers, mid-infrared optoelectronics, emerging research areas, dilute bismide and nitride alloys, Group-IV materials, gallium nitride heterostructures, and new nonlinear materials. Finally, the most relevant applications of mid-infrared devices are reviewed in industry, gas sensing, spectroscopy, and imaging. This book presents a key reference for materials scientists, engineers and professionals working in R&D in the area of semiconductors and optoelectronics. Provides a comprehensive overview of mid-infrared photodetectors and light sources and the latest materials and devices Reviews emerging areas of research in the field of mid-infrared optoelectronics, including new materials, such as wide bandgap materials, chalcogenides and new approaches, like heterogeneous integration Includes information on the most relevant applications in industry, like gas sensing, spectroscopy and imaging

Quantum Cascade Lasers are a novel source of coherent infrared light, unique in their tunability over the mid-infrared and terahertz range of frequencies. Advances in bandgap engineering and semiconductor processing techniques in recent years have led to the development of highly efficient quantum cascade lasers capable of room temperature operation. Recent work has demonstrated power scaling with broad area quantum cascade lasers by increasing active region width beyond the standard ~10 [micrometer]. Taking into account thermal effects caused by driving a device with electrical power, an experimentally fitted model is developed to predict the optical power output in both pulsed and continuous operation with varying device geometry and minor changes to quantum cascade laser active region design. The effects of the characteristic temperatures of threshold current density and slope efficiency, active region geometry, and doping, on output power are studied in the model. The model is then used to refine the active region design for increased power out in continuous operation for a broad area design. Upon testing the new design, new thermal effects on rollover current density are observed. The model is then refined to reflect the new findings and more accurately predict output power characteristics.

Quantum Cascade Lasers have recently gained considerable attention for their capability to emit infrared radiation in a broad infrared spectral region, very compact dimensions, and high optical power/efficiency. Increasing continuous wave optical power is one of the main research directions in the field. A straightforward approach to increasing optical power in the pulsed regime is to increase number of stages in the cascade structure. However, due to a low active region thermal conductivity, the increase in number of stages leads to active region overheating in continuous wave operation. In this work, an alternative approach to power scaling with device dimensions is explored: number of stages is reduced to reduce active region thermal resistance, while active region lateral size is increased for reaching high optical power level. Using this approach, power scaling for active region width increase from 10[micrometer] to 20[micrometer] is demonstrated for the first time. An analysis based on a simple semi-empirical model suggests that laser power can be significantly improved by increasing characteristic temperature T0 that describes temperature dependence of laser threshold current density.

Quantum cascade lasers (QCLs) are attractive for high-resolution spectroscopy because they can provide high power and a narrow linewidth. They are particularly promising in the terahertz (THz) range since they can be used as local oscillators for heterodyne detection as well as transmitters for direct detection. However, THz QCL-based technologies are still under development and are limited by the lack of frequency tunability as well as the frequency and output power stability for free-running operation. In this dissertation, frequency tuning and linewidth of THz QCLs are studied in detail by using rotational spectroscopic features of molecular species. In molecular spectroscopy, the Doppler eff ect broadens the spectral lines of molecules in the gas phase at thermal equilibrium. Saturated absorption spectroscopy has been performed that allows for sub-Doppler resolution of the spectral features. One possible application is QCL frequency stabilization based on the Lamb dip. Since the tunability of the emission frequency is an essential requirement to use THz QCL for high-resolution spectroscopy, a new method has been developed that relies on near-infrared (NIR) optical excitation of the QCL rear-facet. A wide tuning range has been achieved by using this approach. The scheme is straightforward to implement, and the approach can be readily applied to a large class of THz QCLs. The frequency and output stability of the local oscillator has a direct impact on the performance and consistency of the heterodyne spectroscopy. A technique has been developed for a simultaneous stabilization of the frequency and output power by taking advantage of the frequency and power regulation by NIR excitation. The results presented in this thesis will enable the routine use of THz QCLs for spectroscopic applications in the near future.

Advances in High-Power Fiber and Diode Laser Engineering provides an overview of recent research trends in fiber and diode lasers and laser systems engineering. In recent years, many new fiber designs and fiber laser system strategies have emerged, targeting the mitigation of different problems which occur when standard optical fibers are used for making high-power lasers. Simultaneously, a lot of attention has been put to increasing the brightness and the output power of laser diodes. Both of these major laser development directions continue to advance at a rapid pace with the sole purpose of achieving higher power while having excellent beam quality. The book begins by introducing the principles of diode lasers and methods for improving their brightness. Later chapters cover quantum cascade lasers, diode pumped high power lasers, high average power LMA fiber amplifiers, high-power fiber lasers, beam combinable kilowatt all-fiber amplifiers, and applications of 2 μm thulium fiber lasers and high-power GHz linewidth diode lasers. Written by a team of authors with experience in academia and industrial research and development, and brought together by an expert editor, this book will be of use to anyone interested in laser systems development at the laboratory or commercial scale.

This book provides an introduction to quantum cascade lasers, including the basic underlying models used to describe the device. It aims at giving a synthetic view of the topic including the aspects of the physics, the technology, and the use of the device. It should also provide a guide for the application engineer to use this device in systems. The book is based on lecture notes of a class given for Masters and beginning PhD students. The idea is to provide an introduction to the new and exciting developments that intersubband transitions have brought to the use of the mid-infrared and terahertz region of the electromagnetic spectrum. The book provides an introductory part to each topic so that it can be used in a self-contained way, while references to the literature will allow deeper studies for further research.

The active region of conventional Quantum Cascade Lasers (QCLs) is composed of quantum wells and barriers of fixed alloy composition. As a consequence, they suffer severe carrier leakage from the upper laser level, as evidenced by low characteristic-temperature values for both the threshold current density and the slope efficiency, over a wide range of heatsink temperatures above room temperature. Here, we describe three methods by which the performance of these devices can be substantially increased. First, to suppress carrier leakage, the energy separation between the upper laser level and the next-higher energy state in the active region, E54 (or E43), needs to be increased; to this end, we propose 4.8μm-emitting, step-tapered active-region (STA) QCLs for nearly complete suppression of carrier leakage. Secondly, we introduce an 8-9μm-emitting STA-QCL design, which also employs a miniband-like carrier extraction scheme to ensures rapid depopulation of the lower laser level. We call the fast, carrier-extraction scheme resonant extraction (RE) since it involves resonant-(tunneling)-extraction not only from lower active-region levels but also from the lower laser level. When both the STA concept and miniband-like carrier extraction scheme are applied, in so-called STA-RE QCLs, it is shown that record-high internal differential efficiency hid values of ~ 86% can be achieved, by comparison to the prior state-of-the-art values of 57 to 67%. Furthermore, the fundamental upper limit for hid is shown be ~ 90%. With this improvement to internal differential efficiency, the wall-plug efficiency, hwp of mid-infrared-emitting QCLs should be ~34% higher than previously predicted, with hwp reaching values in excess of 40% for 4.6μm-emitting QCLs. Preliminary results from 5.0μm-emitting STA-RE QCLs are shown. Lastly, we show how single QCL emitters can be monolithically beam-combined to create High-Index-Contrast Photonic-Crystal (HC-PC) lasers as a means to coherently scale a QCL's output power while maintaining high beam quality, even under continuous-wave (CW) operating conditions. We present one such structure, which provided an output power of 5.5 W in a far-field beam pattern with lobewidths ~1.65 times the diffraction limit, and 82% energy contained in the central lobe. Methods to further improve on this result are also discussed.