Design Construction And Operation Of A Pecvd System And Development Of Geo2 Sio2 Thin Film Glass Dielectics By Low Pressure Chemical Vapor Deposition

This book provides an overview of chemical vapor deposition (CVD) methods and recent advances in developing novel materials for application in various fields. CVD has now evolved into the most widely used technique for growth of thin films in electronics industry. Several books on CVD methods have emerged in the past, and thus the scope of this book goes beyond providing fundamentals of the CVD process. Some of the chapters included highlight current limitations in the CVD methods and offer alternatives in developing coatings through overcoming these limitations.

Presents an extensive, comprehensive study of chemical vapor deposition (CVD). Understanding CVD requires knowledge of fluid mechanics, plasma physics, chemical thermodynamics, and kinetics as well as homogenous and heterogeneous chemical reactions. This text presents these aspects of CVD in an integrated fashion, and also reviews films for use in integrated circuit technology.

In early 1987 I was attempting to develop a CVD-based tungsten process for Intel. At every step ofthe development, information that we were collecting had to be analyzed in light of theories and hypotheses from books and papers in many unrelated subjects. Thesesources were so widely different that I came to realize there was no unifying treatment of CVD and its subprocesses. More interestingly, my colleagues in the industry were from many disciplines (a surface chemist, a mechanical engineer, a geologist, and an electrical engineer werein my group). To help us understand the field of CVD and its players, some of us organized the CVD user's group of Northern California in 1988. The idea for writing a book on the subject occurred to me during that time. I had already organized my thoughts for a course I taught at San Jose State University. Later Van Nostrand agreed to publish my book as a text intended for students at the senior/first year graduate level and for process engineers in the microelectronics industry, This book is not intended to be bibliographical, and it does not cover every new material being studied for chemical vapor deposition. On the other hand, it does present the principles of CVD at a fundamental level while uniting them with the needs of the microelectronics industry.

A laboratory-scale reactor and a novel method for the atmospheric pressure chemical vapor deposition (APCVD) of SiO2-x films are developed. The deposited films are investigated to synthesize heterogeneously upon the substrate surface with the elimination of the so-called gas-phase reaction, hence preventing parasitic oxide particles upon the substrate surface and the reactor inner walls. The films are extensively inspected in terms of chemical and optical properties and utilized for crystalline silicon solar cell applications. Simple reactor design with low safety measures, a wide range of deposition rates, high film resilience, and stability for the intended applications are successfully achieved. The newly developed APCVD SiO2-x is proven to protect the Si wafer surface against texturing in alkaline and acidic solutions. Electroplated metallization schemes of heterojunction and passivated emitter rear contact solar cells are examined with the use of the SiO2-x as a masking layer in the grid electrode-free area.

This book discusses the study of simulating the growth of a thin film by chemical vapor deposition (CVD) processes. In recent years, due to the research in producing high-temperature films by depositing low pressures, the processes have increased and understanding the control mechanism of such processes has become very important. An underlying hierarchy of models for low-temperature and low-pressure plasma is presented in order to discuss the processes that can be used to implant or deposit thin layers of important materials. Due to the multi-scale problem of the flow and reaction processes, the authors propose multi-scale problems which are divided into near-field and far-field models.