Characterization In Silicon Processing

This volume is devoted to the consideration of the use use of surface, thin film and interface characterization tools in support of silicon-based semiconductor processing. The approach taken is to consider each of the types of films used in silicon devices individually in its own chapter and to discuss typical problems seen throughout that films' history, including characterization tools which are most effectively used to clarifying and solving those problems.

This volume is devoted to the consideration of the use use of surface, thin film and interface characterization tools in support of silicon-based semiconductor processing. The approach taken is to consider each of the types of films used in silicon devices individually in its own chapter and to discuss typical problems seen throughout that films' history, including characterization tools which are most effectively used to clarifying and solving those problems.

The activities of the semiconductor industry to introduce a new, large wafer diameter were triggered by expected potential overall savings - cost and resource - and an anticipated increasing demand for Silicon wafers. In the beginning, around 1994, agreement on the diameter of the next wafer generation had to be achieved and finally 300 mm was globally accepted to be the next wafer diameter, a decision obtained at international summits in 1994/1995, based on the work of a SEMI task force. Several workshops on 300 mm wafers have been held by SEMI, JSNM and other organizations during the past few years. However, the present E-MRS conference on Techniques and Challenges for 300 mm Silicon: Processing, Characterization, Modeling and Equipment was the first international scientific conference about this subject. The papers - invited as well as submitted - cover a wide range of subjects, financial issues, fab concepts, crystal growth, wafer process development, material and defect issues, wafer characterization and provide an excellent review of the present status of 300 mm technology.

Silicon on Insulator is more than a technology, more than a job, and more than a venture in microelectronics; it is something different and refreshing in device physics. This book recalls the activity and enthu siasm of our SOl groups. Many contributing students have since then disappeared from the SOl horizon. Some of them believed that SOl was the great love of their scientific lives; others just considered SOl as a fantastic LEGO game for adults. We thank them all for kindly letting us imagine that we were guiding them. This book was very necessary to many people. SOl engineers will certainly be happy: indeed, if the performance of their SOl components is not always outstanding, they can now safely incriminate the relations given in the book rather than their process. Martine, Gunter, and Y. S. Chang can contemplate at last the amount of work they did with the figures. Our SOl accomplices already know how much we borrowed from their expertise and would find it indecent to have their detailed contri butions listed. Jean-Pierre and Dimitris incited the book, while sharing their experience in the reliability of floating bodies. Our families and friends now realize the SOl capability of dielectrically isolating us for about two years in a BOX. Our kids encouraged us to start writing. Our wives definitely gave us the courage to stop writing. They had a hard time fighting the symptoms of a rapidly developing SOl allergy.

The continuous shrinkage of silicon devices is presenting challenges to ion beam processing and characterization of Si materials. In this thesis, we have studied some issues related to ion beam analysis and processing of silicon materials. First, we demonstrate the use of nuclear reaction analysis (NRA) combined with oxidation/etching to obtain the boron depth profile in a $\delta$-doped Si structure. Our measurements show very sharp interfaces between doped and undoped layers, with the attainable depth resolution of $\sim$0.7 nm. The technique is further applied to examine the B redistribution in the $\delta$-doped Si structure after solid phase epitaxial growth. Second, we study the effects of temperature and flux on the lattice damage induced by 1.0 MeV Si ion self-implantation. The decreasing rate of near-surface damage with implant temperature is distinctly different from that of end-of-range damage, suggesting that different mechanisms for damage formation are involved along the ion track. The flux effect on lattice damage is found to vary with temperature. Finally, we study boron transient enhanced diffusion (TED) under P and B isotope doping conditions. The effective boron diffusivity and the immobile boron density decrease with increasing P doping concentrations. This is consistent with the clustering model and suggests that the occurrence of TED for low boron concentration cannot be explained by the Fermi-level model. Compared to $\sp$B-free Si, $\sp$B TED in the $\sp$B-doped Si is retarded after the initial low-temperature annealing, while more broadening of the $\sp$B profile occurs in the $\sp$B-doped sample after a second annealing at high temperature. This phenomenon is discussed in terms of trapping of Si interstitials in $\sp$B doping background. This study also provides a means for testing the "+1" model which is important for TED modeling.

Lifetime spectroscopy is one of the most sensitive diagnostic tools for the identification and analysis of impurities in semiconductors. Since it is based on the recombination process, it provides insight into precisely those defects that are relevant to semiconductor devices such as solar cells. This book introduces a transparent modeling procedure that allows a detailed theoretical evaluation of the spectroscopic potential of the different lifetime spectroscopic techniques. The various theoretical predictions are verified experimentally with the context of a comprehensive study on different metal impurities. The quality and consistency of the spectroscopic results, as explained here, confirms the excellent performance of lifetime spectroscopy.

This book covers modern analog components, their characteristics, and interactions with process parameters. It serves as a comprehensive guide, addressing both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions. Based on the authors’ extensive experience in the development of analog devices, this book is intended for engineers and scientists in semiconductor research, development and manufacturing. The problems at the end of each chapter and the numerous charts, figures and tables also make it appropriate for use as a text in graduate and advanced undergraduate courses in electrical engineering and materials science. Enables engineers to understand analog device physics, and discusses important relations between process integration, device design, component characteristics, and reliability; Describes in step-by-step fashion the components that are used in analog designs, the particular characteristics of analog components, while comparing them to digital applications; Explains the second-order effects in analog devices, and trade-offs between these effects when designing components and developing an integrated process for their manufacturing.

"Characterization in Compound Semiconductor Processing is for scientists and engineers working with compound semiconductor materials and devices who are not characterization specialists. Materials and processes typically used in R&D and in the fabrication of GaAs, GaA1As, InP and HgCdTe based devices provide examples of common analytical problems. The book discusses a variety of characterization techniques to provide insight into how each individually, or in combination, might be used in solving problems associated with these materials. The book will help in the selection and application of the appropriate analytical techniques by its coverage of all stages of materials or device processing: substrate preparation, epitaxial growth, dielectric film deposition, contact formation and dopant introduction."--P. [4] of cover.