Amorphous And Crystalline Insulating Thin Films 1996 Volume 446

This book is devoted to the continuing research and development of thin-dielectric films for optical and microelectronic applications. Although thermal SiO2 has been the dominant dielectric for thin films in microelectronic applications for many years, there is a growing need for low-dielectric constant materials for interlevel dielectrics (less capacitive cross-talk and reduced delay) and high-dielectric constant materials to minimize the space and maximize the capacitance of storage devices such as DRAMs. With the demands put forth by the microelectronics community, this field is expected to develop significantly in the near future. Also featured is the growing area involving the structure and characteriza-tion of buried a-SiO2 layers formed by O+ ion implantation or the Smart Cut Unibond® process. These techniques are evolving into viable methods for producing commercial silicon-on-insulator substrates for device applications requiring radiation hardness, high-speed and low-power performance, and high-temperature operation.

An interdisciplinary group of materials scientists, physicists, chemists and engineers come together in this book to discuss recent advances in the structure and morphology of thin films. Both scientific and technological issues are addressed. Work on thin films for a host of applications including microelectronics, optics, tribology, biomedical technologies and microelectromechanical systems (MEMS) are featured. Topics include: kinetics of growth; grain growth; instabilities, segregation and ordering; silicides; metallization; stresses in thin films; deposition and growth simulations; energetic growth processes; diamond films and carbide and nitride films.

Low-dielectric constant materials are needed to improve the performance and speed of future integrated circuits. In fact, the diversity of contributors to this book is testimony to the global significance of the topic to the future of semiconductor manufacturing. Presentations include those by semiconductor equipment manufacturers and chemical source suppliers, academia from six countries, four government laboratories and five major device manufacturers. Approaches to designing and implementing reduction in dielectric constant for intermetal dielectric materials are featured and range from the evolution of silicon dioxide to fluorinated silicate glass, to the use of inorganic/organic polymers and spin-on-material, to fluorinated diamond-like carbon and nanoporous silica. The book also addresses the practical aspects of the use of low-dielectric constant materials such as chemical mechanical polishing of these materials and optimization of wiring delays in devices utilizing low-k material.

These proceedings present a review of the research being carried out in the field of amorphous insulating thin films. Topics discussed include: nitrides, structure and defects; hydrogen in MOS structures and oxides; silicon dioxide, charge trapping; and ONO and nitride oxides.

Proceedings of the March 1997 symposium, the central thrust being the relationship of magnetic properties and device performance to structure at the atomic, nanometer, and submicron length scales in these systems of reduced dimensionality. The 89 contributions cover the following topics: synthesis, processing, and characterization; novel applications and approaches for magnetism; nano-microstructure and magnetic properties; structure and properties--mixing, strain, and steps; nanoscale magnetic confinement, particles, and arrays; magnetization reversal and domain structure; synthesis and characterization; synchrotron radiation studies of magnetic materials; magneto-optical properties, effects, and measurements; magnetic phenomena; CMR and tunneling; and interlayer coupling and spin polarization. Annotation copyrighted by Book News, Inc., Portland, OR

The importance and scope of solid-state chemistry has grown in response to the continuing challenge to understand, control and predict the structures and properties of solids at the atomic level, and to synthesize new compounds with enhanced physical response. The many successes in the preparation of materials with unique electronic, optical, magnetic and catalytic properties are a clear testament to the vitality and importance of solid-state chemistry to materials research. This book provides an interdisciplinary forum for discussion and exchange of ideas on both the recent advances in solid-state chemistry and their impact on the development and application of inorganic materials. Topics include: chalcogenides; synthesis and reactivity; materials synthesis; theory; optical properties; electronic and magnetic properties; dielectrics and ferroelectrics; solid-state ionics and surfaces and interfaces.