Advanced Metallization Conference 2008 Amc 2008

The Advanced Metallization Conference - held in San Diego, California, and Tokyo, Japan - marked its 25th anniversary in 2008. These two sister conferences form a unique 'one conference at two sites' that focuses on the latest R&D and manufacturing results, as well as real-world integration and reliability data on the application of metallization and related technologies for advanced IC devices. Scientists and engineers from around the world came to listen and present state-of-the-art work in the field of ULSI interconnect technology including metallization, dielectrics, integration, packaging, design and vertical integration. A keynote address by Gary Patton, vice president, IBM Systems and Technology Group, on 'Leading-edge Silicon Technology through Innovation and Collaboration', is featured. Additional topics include: integration; metallization; materials and characterization; CMP and cleaning; 3D integration and packaging; low-k materials; and reliability and yield.

This issue of ECS Transactions covers emerging materials, process and technology options for large-area silicon wafers to enhance advanced IC performance or to enable revolutionary device structures with entirely new functionalities. Topics : high-mobility channel materials, (e.g. strained Si/Ge, compound semiconductors and graphene), high-performance gate stacks and low-resistivity junctions and contacts on new, Si-compatible materials; new materials and processes for 3-D (TSV) integration ; synthesis of nano-structures including wires, pores and membranes of Si-compatible materials; novel MEMS/NEMS structures and their integration with the mainstream Si-IC technology.

Finding new materials for copper/low-k interconnects is critical to the continuing development of computer chips. While copper/low-k interconnects have served well, allowing for the creation of Ultra Large Scale Integration (ULSI) devices which combine over a billion transistors onto a single chip, the increased resistance and RC-delay at the smaller scale has become a significant factor affecting chip performance. Advanced Interconnects for ULSI Technology is dedicated to the materials and methods which might be suitable replacements. It covers a broad range of topics, from physical principles to design, fabrication, characterization, and application of new materials for nano-interconnects, and discusses: Interconnect functions, characterisations, electrical properties and wiring requirements Low-k materials: fundamentals, advances and mechanical properties Conductive layers and barriers Integration and reliability including mechanical reliability, electromigration and electrical breakdown New approaches including 3D, optical, wireless interchip, and carbon-based interconnects Intended for postgraduate students and researchers, in academia and industry, this book provides a critical overview of the enabling technology at the heart of the future development of computer chips.

This book is based on recent research work conducted by the authors dealing with the design and development of active and passive microwave components, integrated circuits and systems. It is divided into seven parts. In the first part comprising the first two chapters, alternative concepts and equations for multiport network analysis and characterization are provided. A thru-only de-embedding technique for accurate on-wafer characterization is introduced. The second part of the book corresponds to the analysis and design of ultra-wideband low- noise amplifiers (LNA).

A central resource of technology and methods for environments where the control of contamination is critical.

A central resource of technology and methods for environments where the control of contamination is critical.

A central resource of technology and methods for environments where the control of contamination is critical.

The Handbook of Thin Film Deposition is a comprehensive reference focusing on thin film technologies and applications used in the semiconductor industry and the closely related areas of thin film deposition, thin film micro properties, photovoltaic solar energy applications, new materials for memory applications and methods for thin film optical processes. In a major restructuring, this edition of the handbook lays the foundations with an up-to-date treatment of lithography, contamination and yield management, and reliability of thin films. The established physical and chemical deposition processes and technologies are then covered, the last section of the book being devoted to more recent technological developments such as microelectromechanical systems, photovoltaic applications, digital cameras, CCD arrays, and optical thin films. A practical survey of thin film technologies aimed at engineers and managers involved in all stages of the process: design, fabrication, quality assurance and applications Covers core processes and applications in the semiconductor industry and new developments in the photovoltaic and optical thin film industries The new edition takes covers the transition taking place in the semiconductor world from Al/SiO2 to copper interconnects with low-k dielectrics Written by acknowledged industry experts from key companies in the semiconductor industry including Intel and IBM Foreword by Gordon E. Moore, co-founder of Intel and formulator of the renowned ‘Moore’s Law’ relating to the technology development cycle in the semiconductor industry