Advanced Iii V Mosfet

Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.

Comprehensive reference on the fundamental principles and basic physics dictating metal–oxide–semiconductor field-effect transistor (MOSFET) operation Advanced Nanoscale MOSFET Architectures provides an in-depth review of modern metal–oxide–semiconductor field-effect transistor (MOSFET) device technologies and advancements, with information on their operation, various architectures, fabrication, materials, modeling and simulation methods, circuit applications, and other aspects related to nanoscale MOSFET technology. The text begins with an introduction to the foundational technology before moving on to describe challenges associated with the scaling of nanoscale devices. Other topics covered include device physics and operation, strain engineering for highly scaled MOSFETs, tunnel FET, graphene based field effect transistors, and more. The text also compares silicon bulk and devices, nanosheet transistors and introduces low-power circuit design using advanced MOSFETs. Additional topics covered include: High-k gate dielectrics and metal gate electrodes for multi-gate MOSFETs, covering gate stack processing and metal gate modification Strain engineering in 3D complementary metal-oxide semiconductors (CMOS) and its scaling impact, and strain engineering in silicon–germanium (SiGe) FinFET and its challenges and future perspectives TCAD simulation of multi-gate MOSFET, covering model calibration and device performance for analog and RF applications Description of the design of an analog amplifier circuit using digital CMOS technology of SCL for ultra-low power VLSI applications Advanced Nanoscale MOSFET Architectures helps readers understand device physics and design of new structures and material compositions, making it an important resource for the researchers and professionals who are carrying out research in the field, along with students in related programs of study.

As scaling of silicon-based CMOS devices approaches its end, there is an ever increasing interest in high mobility materials. Among potential candidates for future CMOS devices, III-V materials are the most promising option due to their superior carrier transport properties. Despite their attractive material properties, they face several critical challenges that need to be resolved. The main limitation in III-V MOSFETs is lack of a good native oxide. Recently, devices utilizing a gate stack formed with high-[greek small letter kappa] and metal gate electrode are being explored for EOT scaling. Compared to Si MOSFETs, the surfaces of III-V channel materials are prone to deteriorate, resulting in degradation threshold voltage control, subthreshold characteristics, and overall device performance. The purpose of this dissertation is to address improvement of surface characteristics of III-V materials, especially, InGaAs. First of all, beryllium oxide (BeO) is considered as interface passivation layer for InGaAs MOSFETs. In order to apply BeO onto InGaAs, the chemical and mechanical properties are first studied. Liquid BeO precursor is never used in ALD systems. The chemical properties of ALD BeO film are revealed from AES, XPS, NRA, RBS, and REELS. Using nano-indentation, the mechanical characteristics of ALD BeO are investigated. The second part of the study focuses on the application of ALD BeO to InGaAs MOSFETs. The surface channel MOSFET is employed to understand BeO dielectric with III-V channel. The quantum well (QW) structure is known to withstand InGaAs intrinsic material properties from a device point of view. ALD BeO is applied to QW InGaAs MOSFETs as an interface passivation layer below HfO2. The impact of ALD BeO application for interface passivation is presented using the improvement in device characteristics, for example, drive current (ION), low leakage current (IOFF), effective mobility ([mu]eff), and interface trap density (Dit). The third and final part are about process research for InGaAs surface quality. III-V channel materials are inherent to create notorious native oxide that needs to be treated before the fabrication process. In order to protect pristine III-V surface, in-situ Ar treatment is studied and used before high-[greek small letter kappa] deposition. In addition, deuterium (D2) high-pressure annealing is considered to passivate III-V interface with high-[greek small letter kappa]. To demonstrate the efficacy of these treatment processes, InGaAs MOSCAPs are fabricated, and capacitance characteristics are analyzed and compared. The C-V hysteresis and multi-frequency C-V are measured, and the interface trap density (Dit) is extracted using the C-V result.

During the last decade many new concepts have been proposed for improving the performance of power MOSFETs. The results of this research are dispersed in the technical literature among journal articles and abstracts of conferences. Consequently, the information is not readily available to researchers and practicing engineers in the power device community. There is no cohesive treatment of the ideas to provide an assessment of the relative merits of the ideas. "Advanced Power MOSFET Concepts" provides an in-depth treatment of the physics of operation of advanced power MOSFETs. Analytical models for explaining the operation of all the advanced power MOSFETs will be developed. The results of numerical simulations will be provided to give additional insight into the device physics and validate the analytical models. The results of two-dimensional simulations will be provided to corroborate the analytical models and give greater insight into the device operation.

Brings novel insights to a vibrant research area with high application potential?covering materials, physics, architecture, and integration aspects of future generation CMOS electronics technology Over the last four decades we have seen tremendous growth in semiconductor electronics. This growth has been fueled by the matured complementary metal oxide semiconductor (CMOS) technology. This comprehensive book captures the novel device options in CMOS technology that can be realized using non-silicon semiconductors. It discusses germanium, III-V materials, carbon nanotubes and graphene as semiconducting materials for three-dimensional field-effect transistors. It also covers non-conventional materials such as nanowires and nanotubes. Additionally, nanoelectromechanical switches-based mechanical relays and wide bandgap semiconductor-based terahertz electronics are reviewed as essential add-on electronics for enhanced communication and computational capabilities. Advanced Nanoelectronics: Post-Silicon Materials and Devices begins with a discussion of the future of CMOS. It continues with comprehensive chapter coverage of: nanowire field effect transistors; two-dimensional materials for electronic applications; the challenges and breakthroughs of the integration of germanium into modern CMOS; carbon nanotube logic technology; tunnel field effect transistors; energy efficient computing with negative capacitance; spin-based devices for logic, memory and non-Boolean architectures; and terahertz properties and applications of GaN. -Puts forward novel approaches for future, state-of-the-art, nanoelectronic devices -Discusses emerging materials and architectures such as alternate channel material like germanium, gallium nitride, 1D nanowires/tubes, 2D graphene, and other dichalcogenide materials and ferroelectrics -Examines new physics such as spintronics, negative capacitance, quantum computing, and 3D-IC technology -Brings together the latest developments in the field for easy reference -Enables academic and R&D researchers in semiconductors to "think outside the box" and explore beyond silica An important resource for future generation CMOS electronics technology, Advanced Nanoelectronics: Post-Silicon Materials and Devices will appeal to materials scientists, semiconductor physicists, semiconductor industry, and electrical engineers.

Advanced High Speed Devices covers five areas of advanced device technology: terahertz and high speed electronics, ultraviolet emitters and detectors, advanced III-V field effect transistors, III-N materials and devices, and SiC devices. These emerging areas have attracted a lot of attention and the up-to-date results presented in the book will be of interest to most device and electronics engineers and scientists. The contributors range from prominent academics, such as Professor Lester Eastman, to key US Government scientists, such as Dr Michael Wraback. Sample Chapter(s). Chapter 1: Simulation and Experimental Results on Gan Based Ultra-Short Planar Negative Differential Conductivity Diodes for THZ Power Generation (563 KB). Contents: Simulation and Experimental Results on GaN Basee Ultra-Short Planar Negative Differential Conductivity Diodes for THz Power Generation (B Aslan et al.); Millimeter Wave to Terahertz in CMOS (K K O S Sankaran et al.); Surface Acoustic Wave Propagation in GaN-On-Sapphire Under Pulsed Sub-Band Ultraviolet Illumination (V S Chivukula et al.); The First 70nm 6-Inch GaAs PHEMT MMIC Process (H Karimy et al.); Performance of MOSFETs on Reactive-Ion-Etched GaN Surfaces (K Tang et al.); GaN Transistors for Power Switching and Millimeter-Wave Applications (T Ueda et al.); Bi-Directional Scalable Solid-State Circuit Breakers for Hybrid-Electric Vehicles (D P Urciuoli & V Veliadis); and other papers. Readership: Electronic engineers, solid state physicists, graduate students studying physics or electrical engineering.

Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.

These proceedings describe processing, materials, and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.